ECG005
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, Rbias = 18 Ω, Icc = 65 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
22.5
-29.5
-31
+17.5
+33.6
5.4
500
22.5
-28
-22
+17.8
+33.5
5.3
900
22.2
-25
-17.5
+18
+34
3.5
1900
21.5
-19.5
-11.2
+17.6
+32
3.3
2140
21.3
-18
-10.3
+17.3
+31.5
3.3
2400
21.1
-16.9
-9.5
+17.1
+31
3.3
3500
20.2
-14.2
-6.7
+16
5800
17.2
-8.2
-3
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 Ω, Icc = 65 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +4.5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
25
23
21
19
17
15
0.5
40
Small Signal Gain
25°C -40°C 85°C
1
1.5
2
Frequency (GHz)
OIP3 vs. Frequency
S11 & S22
0
25°C
-5
-10
-15
-20
-25
-30
2.5
0.5
S11 S22
1.5
Frequency (GHz)
Noise Figure vs. Frequency
6
Icc vs Vde
160
140
120
100
80
25°C
60
40
20
0
2.5
0123456
Vde (V)
P1dB vs. Frequency
24
35
30
25
20
0.5
25°C -40°C 85°C
1
1.5
2
Frequency (GHz)
5
4
3
2
2.5
0.5
1
1.5
Frequency (GHz)
20
16
12
2
0.5
25°C -40°C 85°C
1
1.5
2
2.5
Frequency (GHz)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
Page 2 of 4 April 2007