RF2174 Просмотр технического описания (PDF) - RF Micro Devices

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RF2174

3V DCS POWER AMPLIFIER

RF Micro Devices 

RF2174

Application Schematic

Preliminary

VCC

Instead of a stripline,

12 pF

an inductor of ~6 nH

2

1 nF

Very close

to

pin 15/16

can be used

VCC

AT_EN

RF IN

33 pF

Distance between

edge of device and

capacitor is 0.240" to

improve the "off"

isolation

VCC

1.0 pF

1 16 15 14 13

2

12

3

11

4

10

15 pF

Quarter wave

length

Instead of a stripline, an

inductor of 2.2 nH can

be used

50 Ω µstrip

33 pF

3.6 pF

4.3 pF

Note 1

1.3 pF

1.3 pF

Note 1

56 7 89

VCC

Distance between

edge of device and

capacitor is 0.080"

Distance center to

center of capacitors

0.220"

RF OUT

15 pF 15 pF

15 pF

15 pF

APC

Note: All capacitors are standard 0402 multi layer chip

Note 1: Using a hi-Q capacitor will increase efficiency slightly

2-238

Rev A6 010720

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