RF2140 Просмотр технического описания (PDF) - RF Micro Devices

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RF2140

3V DCS POWER AMPLIFIER

RF Micro Devices 

RF2140

Application Schematic

Instead of a

stripline an inductor

VCC

of ~6 nH can be

used

2

1 nF

15pF

VCC

Very close to pin 15/16

AT_EN

1.0 pF

1 16 15 14 13

AT_EN

2

12

15 pF

Instead of a

stripline an

Quarter wave inductor can be

length used

RF IN

RF IN

3

15 pF GND1

4

RF OUT

11

10

50 Ω µstrip

5.1 pF

Note 1

15 pF

1.0 pF

Note 1

RF OUT

56789

Distance between 3.9 Ω

edge of device

and capacitor is VCC 15

0.240" to improve

pF

the "off" isolation

15

pF

VCC

15 15

pF pF

APC

Distance between

edge of device

and capacitor is

0.080"

Distance center to

center of

capacitors is

0.220"

Note: All capacitors are standard

0402 multi layer chip

Note 1: Using a hi-Q capacitor

will increase efficiency slightly

Internal Schematic

VCC1

VCC2

RF OUT

RF IN

VCC

750 Ω

500 Ω

APC1

5k Ω

AT_EN

2k Ω

1.5k Ω

320 Ω

2.5k Ω

APC1

500 Ω

VCC

2.5k Ω

APC2

200 Ω

VCC

1.5k Ω

GND1

GND2

PKG BASE

2-136

Rev A12 011031

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