DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

EA60QC09-F Просмотр технического описания (PDF) - Nihon Inter Electronics

Номер в каталоге
Компоненты Описание
производитель
EA60QC09-F
NIEC
Nihon Inter Electronics NIEC
EA60QC09-F Datasheet PDF : 6 Pages
1 2 3 4 5 6
SBD Type : EA60QC09-F
FEATURES
* TO-252AA Case, Surface Mount Device
* Dual Diodes Cathode Common
* Low Forward Voltage drop
* Low Power Loss
* High Surge Capability
* 30 Volts thru 100 Volts Types Available
* Packaged in 16mm Tape and Reel
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.30g
Rating
Symbol
EA60QC09-F
Repetitive Peak Reverse Voltage
Average Rectified
Output Current
P.C.Board
mounted *
-
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
90
1.6 Ta=37°C
6.0 Tc=122°C
50Hz Full Sine Wave
Resistive Load
6.66
45
50Hz Full Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Electrical Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal
Junction to Ambient
Resistance
Junction to Case
* Print Land = 20x20 mm
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM per Arm
VFM Tj=25°C,IFM= 3A per Arm
Rth(j-a) P.C.Board mounted *
Rth(j-c)
-
Min Typ Max
- - 1.0
- - 0.85
- - 80
-- 5
Unit
mA
V
°C/W
°C/W

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]