AS4LC1M16E5-60JC Просмотр технического описания (PDF) - Alliance Semiconductor

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производитель

AS4LC1M16E5-60JC

3V 1M×16 CMOS DRAM (EDO)

Alliance Semiconductor 

Write cycle

Symbol

Parameter

tWCS

Write command setup time

tWCH

Write command hold time

tWP

Write command pulse width

tRWL

Write command to RAS lead time

tCWL

Write command to CAS lead time

tDS

Data-in setup time

tDH

Data-in hold time

Shaded areas indicate advance information.

Read-modify-write cycle

Symbol

Parameter

tRWC

Read-write cycle time

tRWD

RAS to WE delay time

tCWD

CAS to WE delay time

tAWD

Column address to WE delay time

Shaded areas indicate advance information.

Refresh cycle

Symbol

Parameter

tCSR

CAS setup time (CAS-before-RAS)

tCHR

CAS hold time (CAS-before-RAS)

tRPC

RAS precharge to CAS hold time

CAS precharge time

tCPT

(CBR counter test)

Shaded areas indicate advance information.

AS4LC1M16E5

®

-50

Min Max

0

–

10

–

10

–

10

–

8

–

0

–

8

–

-60

Min Max

0

–

10

–

10

–

10

–

10

–

0

–

10

–

Unit Notes

ns 14

ns 14

ns

ns

ns

ns 15

ns 15

-50

Min Max

113

–

67

–

32

–

42

–

-60

Min Max

135

–

77

–

35

–

47

–

Unit Notes

ns

ns 14

ns 14

ns 14

-50

Min Max

5

–

8

–

0

–

10

–

-60

Min Max

5

–

10

–

0

–

10

–

Unit Notes

ns 6

ns 6

ns

ns

4/11/01

Alliance Semiconductor

6

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