RF3120 Просмотр технического описания (PDF) - RF Micro Devices
Номер в каталоге
Компоненты Описание
производитель
RF3120 Datasheet PDF : 6 Pages
| |||
Preliminary
2
RF3120
3V 1800MHZ LINEAR AMPLIFIER MODULE
Typical Applications
• 3V CDMA Korean-PCS Handsets
• Spread-Spectrum Systems
2
Product Description
The RF3120 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA hand-held digital cellular equipment, spread-
spectrum systems, and other applications in the
1750MHz to 1780MHz band. The RF3120 has a digital
bias control voltage for low current in standby mode. The
device is self-contained with 50Ω input and output that is
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The module is an ultra-small
6mmx6mm land grid array with backside ground.
0.800 sq
typ
1.700
3.000
0.100
4.390
6.0 sq
2.500
NOTE: Nominal thickness, 1.55 mm.
0.600
0.100
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC1 1
7 GND
RF IN 2
6 RF OUT
VREG 3
4
5 VCC2
Functional Block Diagram
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched @ 50Ω
• Single 3V Supply
• 29dBm Linear Output Power
• 26dB Linear Gain
• 32% Linear Efficiency
Ordering Information
RF3120
3V 1800MHz Linear Amplifier Module
RF3120 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 010906
2-257
Share Link: 