DTD114E(2005) Просмотр технического описания (PDF) - Unisonic Technologies

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DTD114E
(Rev.:2005)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTD114E

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-10~+40

V

Output Current

IOUT

500

mA

Power Dissipation

Junction Temperature

Storage Temperature

PD

200

mW

TJ

150

°C

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC =5V, IOUT =100μA

VIN(ON) VOUT =0.3V, IOUT =10mA

Output Voltage

VOUT(ON) IOUT/IIN =50mA/2.5mA

Input Current

IIN VIN=5V

Output Current

IOUT(OFF) VCC =50V, VIN =0V

DC Current Gain

hFE VOUT =5V, IOUT =50mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT VCE =10V, IE =−50mA, f=100MHz

*Transition frequency of the device

MIN TYP MAX UNIT

0.5

V

3

0.1 0.3 V

0.88 mA

0.5 μA

56

7

10 13 kΩ

0.8 1 1.2

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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