DTC144TT1(2002) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

DTC144TT1
(Rev.:2002)

NPN SILICON BIAS RESISTOR TRANSISTOR

ON Semiconductor 

DTC144TT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

Collector-Base Breakdown Voltage

(IC = 10 µA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 1)

(IC = 2.0 mA, IB = 0)

ICBO

–

ICEO

–

IEBO

–

V(BR)CBO

50

V(BR)CEO

50

–

100

nAdc

–

500

nAdc

–

0.2

mAdc

–

–

Vdc

–

–

Vdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

Collector-Emitter Saturation Voltage

(IC = 10 mA, IB = 1 mA)

Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)

Input Resistor

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

hFE

160

350

–

VCE(sat)

–

–

0.25

Vdc

VOL

–

–

0.2

Vdc

VOH

4.9

–

–

Vdc

R1

32.9

47

61.1

kΩ

350

300

250

200

150

100

50

RθJA = 370°C/W

0

–50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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