DTC143EE(2000) Просмотр технического описания (PDF) - ON Semiconductor

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DTC143EE
(Rev.:2000)

Bias Resistor Transistor NPN Silicon Surface Mount Transistor

ON Semiconductor 

1

IC/IB = 10

0.1

0.01

DTC114EET1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1

1000

TA = –25°C

25°C

75°C

100

VCE = 10 V

TA = 75°C

25°C

–25°C

0.001

0

4

3

2

1

00

20

40

IC, COLLECTOR CURRENT (mA)

Figure 3. VCE(sat) versus IC

10

50

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 4. DC Current Gain

f = 1 MHz

IE = 0 V

TA = 25°C

100

75°C

10

25°C

TA = –25°C

1

0.1

10

20

30

40

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 5. Output Capacitance

0.01

VO = 5 V

0.001

50

0 1 2 3 4 5 6 7 8 9 10

Vin, INPUT VOLTAGE (VOLTS)

Figure 6. Output Current versus Input Voltage

10

VO = 0.2 V

1

TA = –25°C

25°C

75°C

0.1

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 7. Input Voltage versus Output Current

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4

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