DTC115EET1G(2012) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

DTC115EET1G
(Rev.:2012)

Digital Transistors (BRT) R1 = 100 kΩ, R2 = 100 kΩ

ON Semiconductor 

1

IC/IB = 10

0.1

MUN2236, MUN5236, DTC115EE, DTC115EM3

TYPICAL CHARACTERISTICS

MUN2236, MUN5236, DTC115EE, DTC115EM3

TA = −25°C

25°C

75°C

1000

VCE = 10 V

100

75°C

25°C

TA = −25°C

0.01

10

0 5 10 15 20 25 30 35 40

0.1

1

10

100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 2. VCE(sat) versus IC

Figure 3. DC Current Gain

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0

0

100

f = 10 kHz

lE = 0 V

TA = 25°C

10

75°C

25°C

TA = −25°C

10

20

30

40

VR, REVERSE VOLTAGE (V)

Figure 4. Output Capacitance

1

VO = 5 V

0.1

50

0

5 10 15 20 25 30 35 40

Vin, INPUT VOLTAGE (V)

Figure 5. Output Current versus Input Voltage

100

VO = 0.2 V

10

TA = −25°C

25°C

75°C

1

0.1

0

5

10

15

20

25

30 35

IC, COLLECTOR CURRENT (mA)

Figure 6. Input Voltage versus Output Current

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