DTC115TETL Просмотр технического описания (PDF) - ROHM Semiconductor
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DTC115TETL Datasheet PDF : 3 Pages
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Transistors
DTC115TM / DTC115TE / DTC115TUA /
DTC115TKA / DTC115TSA
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power DTC115TM / DTC115TE
dissipation
DTC115TUA / DTC115TKA
DTC115TSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
150
200
300
150
−55~+150
Unit
V
V
V
mA
mW
˚C
˚C
!Packaging, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC115TM
VMT3
09
T2L
8000
DTC115TE
EMT3
09
TL
3000
DTC115TUA
UMT3
09
T106
3000
DTC115TKA
SMT3
09
T146
3000
DTC115TSA
SPT
-
TP
5000
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
50
-
-
V IC=50µA
Collector-emitter breakdown voltage BVCEO
50
-
-
V IC=1mA
Emitter-base breakdown voltage
BVEBO
5
-
-
V IE=50µA
Collector cutoff current
ICBO
-
-
0.5
µA VCB=50V
Emitter cutoff current
IEBO
-
-
0.5
µA VEB=4V
Collector-emitter saturation voltage
VCE(sat)
-
-
0.3
V IC/IB=1mA/0.1mA
DC current transfer ratio
hFE
100
250
600
-
IC=1mA, VCE=5V
Input resistance
R1
70
100
130
kΩ
-
Transition frequency
fT
-
250
-
MHz VCE=10V, IE=−5mA, f=100MHz
∗
∗ Transition frequency of the device.
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