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DTC123EET1G(2012) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
DTC123EET1G
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
DTC123EET1G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3
1
IC/IB = 10
0.1
TYPICAL CHARACTERISTICS
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3
1000
VCE = 10 V
100
25°C
150°C
10
25°C
150°C
55°C
55°C
1
0.01
0
4
3
2
1
0
0
0.1
10
20
30
40
50
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
f = 10 kHz
IE = 0 V
TA = 25°C
100
150°C
25°C
55°C
10
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
100
1
VO = 5 V
0.1
50
0
1
2
3
4
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
55°C
25°C
1
150°C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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5

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