DTC123EET1G(2012) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

DTC123EET1G
(Rev.:2012)

Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ

ON Semiconductor 

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3

PACKAGE DIMENSIONS

b 3 PL

0.20 (0.008) M D

−E−

2

3

1

C

L

SC−75/SOT−416

CASE 463

ISSUE F

e −D−

HE

0.20 (0.008) E

A

A1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

DIM MIN NOM MAX

A 0.70 0.80 0.90

A1 0.00 0.05 0.10

b 0.15 0.20 0.30

C 0.10 0.15 0.25

D 1.55 1.60 1.65

E 0.70 0.80 0.90

e

1.00 BSC

L 0.10 0.15 0.20

HE 1.50 1.60 1.70

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

INCHES

MIN NOM MAX

0.027 0.031 0.035

0.000 0.002 0.004

0.006 0.008 0.012

0.004 0.006 0.010

0.059 0.063 0.067

0.027 0.031 0.035

0.04 BSC

0.004 0.006 0.008

0.061 0.063 0.065

SOLDERING FOOTPRINT*

0.356

0.014

1.803

0.071

0.787

0.031

0.508

0.020

1.000

0.039

SCALE 10:1

ǒ mm Ǔ

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

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