DTA124TM(2009) Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
DTA124TM Datasheet PDF : 3 Pages
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DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
Packaging specifications
Package
VMT3 EMT3 UMT3 SMT3
Package type Taping Taping Taping Taping
Code
T2L TL T106 T146
Part No.
Basic ordering
unit (pieces)
8000
DTA124TM
DTA124TE
−
DTA124TUA
−
DTA124TKA
−
3000
−
−
−
3000
−
−
−
3000
−
−
−
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits
Symbol
Unit
DTA124TM DTA124TE DTA124TUA DTA124TKA
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−100
mA
PC
150
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Min.
−50
−50
−5
−
−
−
100
15.4
−
Typ.
−
−
−
−
−
−
250
22
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
28.6
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
Conditions
IC=−50μA
IC=−1mA
IE=−50μA
VCB=−50V
VEB=−4V
IC/IB=−5mA/−0.5mA
VCE=−5V, IC=−1mA
−
VCE=−10V, IE=5mA, f=100MHz
Electrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100°C
50
25°C
−40°C
20
10
5
2
1
-100μ -200μ -500μ -1m -2m -5m -10m -20m -50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
-1
-500m
IC/IB=10
-200m
-100m
-50m
-20m
-10m
-5m
Ta=100°C
25°C
−40°C
-2m
-1m
-10μ -20μ -50μ -100μ -200μ -500μ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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