DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

DS28E15 Просмотр технического описания (PDF) - Maxim Integrated

Номер в каталоге
Компоненты Описание
производитель
DS28E15 Datasheet PDF : 6 Pages
1 2 3 4 5 6
ABRIDGED DATA SHEET
DS28E15
1-Wire SHA-256 Secure Authenticator
with 512-Bit User EEPROM
ELECTRICAL CHARACTERISTICS (continued)
(TA = -40NC to +85NC, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
EEPROM
Programming Current
Programming Time for a 32-Bit
Segment
IPROG
tPROG
VPUP = 3.63V (Notes 5, 18)
(Note 19)
1
mA
10
ms
Write/Erase Cycling Endurance
Data Retention
SHA-256 ENGINE
NCY TA = +125NC (Notes 20, 21)
100k
tDR
TA = +125NC (storage) (Notes 22, 23, 24)
10
Years
Computation Current
ICSHA Refer to the full data sheet.
mA
Computation Time
tCSHA
ms
Note 1: Limits are 100% production tested at TA = +25°C and/or TA = +85°C. Limits over the operating temperature range and
relevant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2: System requirement.
Note 3: Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery
times. The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times.
Note 4: Typical value represents the internal parasite capacitance when VPUP is first applied. Once the parasite capacitance is
charged, it does not affect normal communication.
Note 5: Guaranteed by design and/or characterization only. Not production tested.
Note 6: VTL, VTH, and VHY are a function of the internal supply voltage, which is a function of VPUP, RPUP, 1-Wire timing, and
capacitive loading on IO. Lower VPUP, higher RPUP, shorter tREC, and heavier capacitive loading all lead to lower values
of VTL, VTH, and VHY.
Note 7: Voltage below which, during a falling edge on IO, a logic 0 is detected.
Note 8: The voltage on IO must be less than or equal to VIL(MAX) at all times the master is driving IO to a logic 0 level.
Note 9: Voltage above which, during a rising edge on IO, a logic 1 is detected.
Note 10: After VTH is crossed during a rising edge on IO, the voltage on IO must drop by at least VHY to be detected as logic 0.
Note 11: The I-V characteristic is linear for voltages less than 1V.
Note 12: Applies to a single device attached to a 1-Wire line.
Note 13: Defines maximum possible bit rate. Equal to 1/(tW0L(MIN) + tREC(MIN)).
Note 14: An additional reset or communication sequence cannot begin until the reset high time has expired.
Note 15: Interval after tRSTL during which a bus master can read a logic 0 on IO if there is a DS28E15 present. The power-up pres-
ence detect pulse could be outside this interval but will be complete within 2ms after power-up.
Note 16: ε in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to VTH. The actual
maximum duration for the master to pull the line low is tW1L(MAX) + tF - ε and tW0L(MAX) + tF - ε, respectively.
Note 17: δ in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to the input-high
threshold of the bus master. The actual maximum duration for the master to pull the line low is tRL(MAX) + tF.
Note 18: Current drawn from IO during the EEPROM programming interval or SHA-256 computation. The pullup circuit on IO during
the programming and computation interval should be such that the voltage at IO is greater than or equal to VPUP(MIN). A
low-impedance bypass of RPUP activated during programming and computation is the recommended way to meet this
requirement.
Note 19: Refer to the full data sheet.
Note 20: Write-cycle endurance is tested in compliance with JESD47G.
Note 21: Not 100% production tested; guaranteed by reliability monitor sampling.
Note 22: Data retention is tested in compliance with JESD47G.
Note 23: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the-
data sheet limit at operating temperature range is established by reliability testing.
  3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]