DS2906SA38 Просмотр технического описания (PDF) - Dynex Semiconductor
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производитель
DS2906SA38 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
16000
14000
12000
10000
8000
6000
4000
2000
0
0
1
2
3
4
5
6
7
8
Rate of decay of forward current, dIf/dt - (A/µs)
Fig.4 Stored charge
0.1
Conduction Effective thermal resistance
Junction to case ° C/W
Double side
d.c.
0.0065
Halfwave
0.0072
3 phase 120° 0.0073
6 phase 60° 0.0076
Single side
0.013
0.0137
0.0138
0.0141
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.6 Maximum (limit) transient thermal impedance –
junction to case
DS2906SA
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
Rate of decay of forward current, dIf/dt - (A/µs)
Fig.5 Reverse recovery current
90
80
70
60
50
40
30
20
10
0
1
Conditions :
Tcase = 150ºC
VR = 0
Pulse width = 10ms
10
100
Number of pulses
Fig.7 Multi-cycle surge current
5/8
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