DS2906SA39 Просмотр технического описания (PDF) - Dynex Semiconductor
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DS2906SA39 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
IFSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
DS2906SA
Max.
66.5
22
83
34.5
Units
kA
MA2s
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 83.0kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
Anode DC
Cathode DC
Double side
Single side
-
-
-
-
-
-
-
-55
75.0
0.0065
0.013
0.013
0.001
0.002
160
150
150
91.0
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 3000A peak, Tcase = 25°C
At VDRM, Tcase = 150°C
At Tvj = 150°C
At Tvj = 150°C
Min.
Max.
-
1.06
-
400
-
0.78
-
0.0763
Units
V
mA
V
m
3/8
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