RMPA39000 Просмотр технического описания (PDF) - Raytheon Company
Номер в каталоге
Компоненты Описание
производитель
RMPA39000 Datasheet PDF : 5 Pages
| |||
RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Recommended
Procedure
for biasing and
operation
Performance
Data
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power
Step 2: Connect the DC Supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=700 mA
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power
(ii) Turn down and off drain voltage (Vd)
(iii) Turn down and off gate bias voltage (Vg)
RMPA39000 Gain Vs. Frequency Vd=5V, Id=700mA
25.0
24.5
24.0
23.5
23.0
22.5
22.0
36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 40.5
Frequency (GHz)
RMPA39000 Saturated Pout Vs. Frequency Vd=5V, Id=700mA
30.0
29.5
29.0
28.5
www.raytheonrf.com
28.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
40.5
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Share Link: 