RMPA39000 Просмотр технического описания (PDF) - Raytheon Company
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RMPA39000 Datasheet PDF : 5 Pages
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RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
Description
PRODUCT INFORMATION
The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to
multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs
MMIC amplifier chip utilizing Raytheon’s advanced 0.15 µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Features
24 dB small signal gain (typ.)
29 dBm saturated power output (typ.)
Circuit contains individual vias
Chip size 4.28mm x 2.90 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (5V Typical)
Negative DC Voltage
Simultaneous (Vd-Vg)
Positive DC Current
RF Input Power (from 50 ohm source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
PIN
TC
TStg
Rjc
Value
+6
-2
+8
1092
+20
-30 to +85
-55 to +125
17
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
50 ohm system,
Vd = +5V,
Quiescent current
(Idq) = 700 mA
Parameter
Min
Frequency Range
37
Gate Supply Voltage (Vg)1
Gain Small Signal
at Pin=0dBm
20
Gain Variation vs Freq
Power Output at
1 dB Compression
Power Output Saturated
(Pin = + 13dBm)
27.5
Drain Current at
Pin = 0 dBm
Typ
-0.15
24
±1
28
29
700
Max Unit
40 GHz
V
dB
dB
dBm
dBm
mA
Parameter
Drain Current at
P1 dB Compression
Drain Current at Psat
(Pin= + 13dBm)
Power Added Efficiency
(PAE) at P1 dB
Input Return Loss
(Pin = -10 dBm)
Output Return Loss
(Pin = -10 dBm)
Min Typ
730
750
17
8
7
Max Unit
mA
mA
%
dB
dB
www.raytheonrf.com
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 700 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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