RMPA39000 Просмотр технического описания (PDF) - Raytheon Company
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RMPA39000 Datasheet PDF : 5 Pages
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RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
Application
Information
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typical 2 mil gap between the chip and the substrate material.
Figure 1
Functional Block
Diagram
MMIC Chip
Drain Supply (Vd= +5V)
(VDA & VDB)
RF IN
RF OUT
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size = 0.169″ x
0.114″ x 0.002″
Back of Chip is
RF and DC Ground)
Ground
(Back of Chip)
Dimensions in inches
0.004
0.114
0.103
0.068
0.061
Gate Supply
(VGA & VGB)
0.165
0.104
0.059
www.raytheonrf.com
0.015
0
0.008
0
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 2
0
0.160
0.169
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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