RMWD38001 Просмотр технического описания (PDF) - Raytheon Company
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RMWD38001 Datasheet PDF : 8 Pages
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RMWD38001
37-40 GHz Driver Amplifier MMIC
Description
Features
PRODUCT INFORMATION
The RMWD38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Driver Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWD38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a
variety of driver amplifier applications.
4 mil substrate
Small-signal gain 25 dB (typ.)
1dB compressed Pout 18 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 3.0 mm x 1.2 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
8
173
+8
-30 to +85
-55 to +125
126
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25 °C 50Ω
system, Vd=+4 V,
Quiescent Current
(Idq)= 105 mA
Parameter
Min
Frequency Range
37
Gate Supply Voltage (Vg)1
Gain Small Signal at
Pin = -10 dBm
21
Gain Variation vs Frequency
Gain at 1dB Compression
Power Output at 1 dB
Compression
Power Output Saturated:
Pin = -5.5 dBm
15.5
Drain Current at
Pin = -10 dBm
Drain Current at 1 dB
Compression
Typ Max Unit
40 GHz
-0.4
V
25
dB
2
dB
24
dB
18
dBm
19
dBm
105
mA
120
mA
Parameter
Min
Drain Current at Saturated:
Pin = -5.5 dBm
Power Added Efficiency
(PAE): at P1 dB
Input Return Loss
(Pin = -10 dBm)
Output Return Loss
(Pin = -10 dBm)
OIP3
Noise Figure
Detector Voltage
(Pout = +17 dBm)
Typ Max Unit
120
mA
13
%
15
dB
9
dB
28
dBm
6
dB
0.1
V
www.raytheon.com/micro
Note:
1. Typical range of gate voltage is -0.7 to -0.1 V to set Idq of 105 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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