DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RMWD38001 Просмотр технического описания (PDF) - Raytheon Company

Номер в каталоге
Компоненты Описание
производитель
RMWD38001
Raytheon
Raytheon Company Raytheon
RMWD38001 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
RMWD38001
37-40 GHz Driver Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vgs.
Step 3: Slowly apply positive drain bias supply
voltages of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=105 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate voltage (Vg).
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]