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RMPA39100 Просмотр технического описания (PDF) - Raytheon Company

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RMPA39100
Raytheon
Raytheon Company Raytheon
RMPA39100 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Description
Features
PRODUCT INFORMATION
The Raytheon RMPA39100 is a high efficiency power amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMPA39100 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
18 dB small signal gain (typ.)
30 dBm saturated power output (typ.)
Circuit contains individual source vias
Chip Size 4.28 mm x 3.19 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TStg
Rjc
Value
+6
-2
+8
1392
+18
-30 to +85
-55 to +125
9
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C)
50 system,
Vd=+5 V,
Quiescent current
(Idq)=1000 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain Small Signal at
Pin=0 dBm
Gain Variation vs. Frequency
Power Output at
1 dB Compression
Power Output Saturated:
(Pin=+14.5 dBm)
Drain Current at Pin=0 dBm
Drain Current at
P1 dB Compression
Min Typ Max Unit
37
40 GHz
-0.2
V
16 18
dB
+/-1.5
dB
29
dBm
28 30
dBm
1000
mA
1160
mA
Parameter
Min
Drain Current at Psat
(Pin=+14.5 dBm)
Power Added Efficiency (PAE):
at P1dB
OIP3 (17dBm/Tone)
(10 MHz Tone Sep.)
Input Return Loss
(Pin=0 dBm)
Output Return Loss
(Pin=0 dBm)
Typ Max Unit
1200
mA
17
%
35
dBm
10
dB
7
dB
www.raytheonrf.com
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1000 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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