HGTP14N36G3VL Просмотр технического описания (PDF) - Intersil
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HGTP14N36G3VL Datasheet PDF : 6 Pages
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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
2000
1800
FREQUENCY = 1MHz
1600
1400
CIES
1200
1000
800
600
400
200
0
0
CRES
5
COES
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
REF IG = 1mA, RL = 1.7Ω, TC = +25oC
12
6
10
5
8
4
VCE = 12V
6
3
VCE = 4V
4
2
VCE = 8V
2
1
0
0
0
5
10
15
20
25 30
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
355
350
345
340
25oC
335
175oC
330
325
0
2000
4000
6000
8000 10000
RGE, GATE-TO- EMITTER RESISTANCE (Ω)
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
2.3mH
VDD
RGEN = 25Ω
5V
RG
G
C
DUT
E
RL
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
10V
RGE = 50Ω
E
+
VCC
- 300V
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
3-59
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