DMV1500H Просмотр технического описания (PDF) - STMicroelectronics
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DMV1500H Datasheet PDF : 8 Pages
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DMV1500H
Figure 11: Peak reverse recovery current
versus dIF/dt (modulation diode)
IRM(A)
6.0
IF=IP
Tj=125°C
5.0
90% confidence
4.0
3.0
2.0
1.0
0.0
1
dIF/dt(A/µs)
10
100
1000
Figure 12: Transient peak forward voltage
versus dIF/dt (damper diode)
VFP(V)
40
IF=IP
35
Tj=125°C
90% confidence
30
25
20
15
10
5
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
Figure 13: Transient peak forward voltage
versus dIF/dt (modulation diode)
VFP(V)
12
11
IF=IP
Tj=125°C
10
90% confidence
9
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0
0
20
40
60
80 100 120 140 160 180 200
Figure 14: Forward recovery time versus dIF/dt
(damper diode)
tfr(ns)
800
750
700
650
600
550
500
450
400
350
300
0
20
IF=IP
Tj=125°C
VFR=3V
90% confidence
dIF/dt(A/µs)
40
60
80
100
120
140
Figure 15: Forward recovery time versus dIF/dt
(modulation diode)
tfr(ns)
200
175
150
IF=IP
Tj=125°C
VFR=2V
90% confidence
125
100
75
50
25
dIF/dt(A/µs)
0
0
20
40
60
80 100 120 140 160 180 200
Figure 16: Relative variation of dynamic
parameters versus junction temperature
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
1.2
1.0
0.8
VFP
0.6
IRM
0.4
QRR
0.2
0.0
25
Tj(°C)
50
75
100
125
5/8
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