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SBG1030CT Просмотр технического описания (PDF) - LiteOn Technology

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Компоненты Описание
производитель
SBG1030CT
LiteOn
LiteOn Technology LiteOn
SBG1030CT Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
SBG1030CT thru 1045CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 45 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
2
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
D 2 PAK
A
K
1K2
G
E
PIN 1
PIN 2
K
I
D
C
B
F
H
J
K
HEATSINK
D 2 PAK
DIM. MIN. MAX.
A
9.65 10.69
B
14.60 15.88
C
8.25 9.25
D
-----
1.67
E
0.51
1.14
F
2.29
2.79
G
2.29
2.79
H
2.03
2.92
I
1.14
1.40
J
0.30
0.64
K
4.37
4.83
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL SBG1030CT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
Maximum RMS Voltage
VRMS
21
Maximum DC Blocking Voltage
VDC
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC=95 C
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage
at 5A DC (Note 1)
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
Typical Thermal Resistance (Note 2)
R0JC
Typical Junction Capacitance
per element (Note 3)
CJ
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SBG1035CT SBG1040CT
35
40
24.5
28
35
40
10
SBG1045CT UNIT
45
V
31.5
V
45
V
A
125
A
0.55
0.5
50
3.0
200
-55 to +125
-55 to +150
V
mA
C/W
pF
C
C
REV. 4, Sep-2009, KTHB02

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