HGTP15N120C3 Просмотр технического описания (PDF) - Intersil
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HGTP15N120C3 Datasheet PDF : 11 Pages
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HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3S, HGT1S15N120C3S
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC
1200
35
15
120
±20
±30
15A at 1200V
164
1.32
100
-55 to 150
260
6
25
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 720V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
BVECS
ICES
VCE(SAT)
IC = 10mA, VGE = 0V
VCE = BVCES
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
15
25
-
V
-
-
250
µA
-
-
3.0
mA
-
2.3
3.5
V
-
2.4
3.2
V
Gate to Emitter Threshold Voltage
VGE(TH) IC = 250µA, VCE = VGE
4.0
5.6
7.5
V
Gate to Emitter Leakage Current
Switching SOA
IGES
VGE = ±20V
-
SSOA
TJ = 150oC, RG = 10Ω VCE(PK) = 960V
40
VGE = 15V, L = 1mH VCE(PK) = 1200V
15
-
±100 nA
-
-
A
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-
8.8
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
Qg(ON)
td(ON)I
tr I
td(OFF)I
tfI
EON
EOFF
RθJC
IC = IC110,
VCE = 0.5 BVES
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
VGE = 15V
VGE = 20V
-
75
100
nC
-
100
130
nC
-
17
-
ns
-
25
-
ns
-
470 550
ns
-
350 400
ns
-
2100
-
µJ
-
4700
-
µJ
-
-
0.76 oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
2
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