10N120BND Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
10N120BND
Fairchild Semiconductor
10N120BND Datasheet PDF : 8 Pages
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HGTG10N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
4
FREQUENCY = 1MHz
3
CIES
2
1 CRES
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
15
DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
12
VGE = 15V
9
VGE = 10V
6
3
0
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t1
t2
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
150oC
10
25oC
-55oC
1
1
2
3
4
5
6
VF , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
70
TC = 25oC, dIEC / dt = 200A/µs
60
50
trr
40
30
ta
20
tb
10
1
2
5
10
20
IF, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG10N120BND Rev. B
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