G10N120BN Просмотр технического описания (PDF) - Fairchild Semiconductor
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G10N120BN Datasheet PDF : 8 Pages
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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
4
FREQUENCY = 1MHz
3
CIES
2
1
COES
0 CRES
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
15
DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
12
VGE = 15V
9
6
VGE = 10V
3
00
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
10-3
t1
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG10N120BND
RG = 10Ω
L = 2mH
+
-
VDD = 960V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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