DG201HSDJ-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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DG201HSDJ-E3 Datasheet PDF : 9 Pages
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DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
50
60
40
50
±5V
40
30
± 10 V
30
± 15 V
20
20
± 20 V
10
10
V+ = 15 V
V- = - 15 V
125 °C
85 °C
25 °C
0 °C
- 55 °C
0
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltages
0
- 15 - 10
-5
0
5
10
15
VD – Drain Voltage (V)
rDS(on) vs. VD and Temperature
180
160
V+ = 5 V
140
120
100
7V
80
10 V
60
12 V
40
15 V
20
0
0 2 4 6 8 10 12 14 16
VD – Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
2.5
10 nA
1 nA
100 pA
ID(on)
IS(off), ID(off)
10 pA
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (°C)
Leakage Currents vs. Temperature
55
2
50
1.5
1
0.5
0
4 6 8 10 12 14 16 18 20
Positive Supplies (V)
Input Switching Threshold vs. Supply Voltage
45
40
tON
35
tOFF
30
± 4 ± 6 ± 8 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20
Supply Voltage (V)
Switching Time vs. Power Supply Voltage
Document Number: 70038
S-71241–Rev. G, 25-Jun-07
www.vishay.com
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