DG2015DN Просмотр технического описания (PDF) - Vishay Semiconductors
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DG2015DN Datasheet PDF : 6 Pages
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DG2015
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
Leakage Current vs. Temperature
V+ = 3 V
100
ICOM(on)
ICOM(off)
10
INO(off), IINC(off)
800
600
400
200
0
- 200
- 400
Leakage vs. Analog Voltage
V+ = 3 V
ICOM(on)
ICOM(off)
INO(off), IINC(off)
1
- 60 - 40 - 20 0
20 40 60
Temperature (_C)
80 100
- 600
- 800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM, VNO, VNC - Analog Voltage (V)
Switching Time vs. Temperature
60
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
10
50
40
tON V+ = 3 V
30
tOFF V+ = 3 V
- 10
LOSS
- 30
- 50
OIRR
XTALK
- 70
V+ = 3 V
RL = 50 W
20
- 60 - 40 - 20 0
20 40 60
Temperature (_C)
80 100
Switching Threshold vs. Supply Voltage
3.0
- 90
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Charge Injection vs. Analog Voltage
30
2.5
25
2.0
20
1.5
15
V+ = 3 V
1.0
10
0.5
5
0.0
0
1
2
3
4
5
6
7
V+ - Supply Voltage (V)
www.vishay.com
4
0
0
1
2
3
4
5
6
VCOM - Analog Voltage (V)
Document Number: 71971
S-03423—Rev. B, 03-Mar-03
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