DG183AP/883 Просмотр технического описания (PDF) - Temic Semiconductors
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DG183AP/883 Datasheet PDF : 8 Pages
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DG183/184/185
Typical Characteristics
Supply Current vs. Temperature
5
4
3
IL
–I–
2
–IR
1
I+
0
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
rDS(on) vs. Temperature
100
DG185
DG184
10
DG183
VD= –7.5 V
IS = –10 mA
1
–50 –25 0 25 50 75 100 125
Temperature (_C)
Leakage vs. Temperature (DG183)
100
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
10
1
0.1
25
6
IS(off)
ID(on)
ID(off)
45
65
85
105
125
Temperature (_C)
IIN vs. VIN and Temperature
100
VINL = 0
VINH = 5 V
80
60
–IINL
40
20
IINH
0
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
Switching Time vs. VD and Temperature (DG183)
230
VD = 7.5 V
210
VD = –7.5 V
tON
190
170
tOFF
150
130
110
90
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
Switching Time vs. VD and Temperature (DG184/185)
130
120
VD = 7.5 V
VD = –7.5 V
110
tON
100
90
80
tOFF
70
60
50
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
Siliconix
S-52895—Rev. D, 16-Jun-97
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