20N35GVL Просмотр технического описания (PDF) - Intersil
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20N35GVL Datasheet PDF : 6 Pages
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
1600
1400
FREQUENCY = 1MHz
1200
1000
CIES
800
600
400
COES
200
CRES
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
12
6
10
5
VCE = 12V
8
4
6
VCE = 8V
3
VCE = 4V
4
2
2
1
0
0
0
10
20
30
40
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
SINGLE PULSE
10-5
10-3
10-1
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
Test Circuits
350
ICER = 10mA
345
TC = +25oC AND +175oC
340
335
0
2000
4000
6000
8000 10000
RGE, GATE-TO-EMITTER RESISTANCE (V)
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
2.3mH
VDD
RGEN = 25Ω
5V
RG
G
C
DUT
E
FIGURE 17. USE TEST CIRCUIT
RL
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
10V
RGE = 50Ω
E
+
VCC
- 300V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
3-70
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