DF3A6.8FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
Tj
125
°C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
⎯
JEITA
⎯
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
ZZK
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 5 V
VR = 0, f = 1MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
⎯
10
25
Ω
⎯
30
⎯
Ω
⎯
⎯
0.5
μA
―
45
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-01