MDS350L Просмотр технического описания (PDF) - GHz Technology
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MDS350L Datasheet PDF : 1 Pages
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R.3.A.992605-HERIC
MDS350L
350 Watts, 45 Volts, Pulsed
Avionics 1030 - 1090 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The MDS350L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55KT Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
583 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
55 V
3.5 V
30 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 45 Volts
PW = Note 1
DF = Note 1
F = 1030 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Emitter to Base Breakdown
BVces
Collector to Emitter Breakdown
hFE
DC – Current Gain
θjc2
Thermal Resistance
NOTE 1: 250 µs at 10% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
Ie = 50 mA
Ic = 100 mA
Vce = 5V, Ic = 2A
MIN TYP MAX UNITS
350
W
55
W
8
dB
47
%
2:1
3.5
V
55
V
20
0.3 °C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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