DCR720E16 Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DCR720E16

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DYNAMIC CHARACTERISTICS

DCR720E

Symbol

Parameter

Test Conditions

Min. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125°C

dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open

dI/dt Rate of rise of on-state current

From 67% VDRM to 1000A Repetitive 50Hz

Gate source 30V, 10,

Non-repetitive

tr < 0.5µs, Tj = 125°C

VT

On-state voltage

IT = 1500A, Tcase = 125°C

VT(TO) Threshold voltage – Low level

Tcase = 125°C

rT

On-state slope resistance – Low level

Tcase = 125°C

tgd

Delay time

VD = 67% VDRM, gate source 30V, 10

tr = 0.5µs, Tj = 25°C

tq

Turn-off time

Tj = 125°C, VR = 100V, dI/dt = 10A/µs,

dVDR/dt = 20V/µs linear to 67% VDRM

QS

Stored charge

IRR

Reverse recovery current

IL

Latching current

IT = 1000A, tp = 1000us,Tj = 125°C,

dI/dt =10A/µs,

Tj = 25°C,

-

30

1000

-

-

200

-

1000

1.97

-

1.09

- 0.587

-

3.0

-

150

-

1500

-

110

-

1

mA

V/µs

A/µs

A/µs

V

V

m

µs

µs

µC

A

A

IH

Holding current

Tj = 25°C,

-

200

mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

Gate trigger voltage

VGD

Gate non-trigger voltage

IGT

Gate trigger current

IGD

Gate non-trigger current

Test Conditions

VDRM = 5V, Tcase = 25°C

At 40% VDRM, Tcase = 125°C

VDRM = 5V, Tcase = 25°C

At 40% VDRM, Tcase = 125°C

Max. Units

3

V

TBD

V

300 mA

TBD mA

3/9

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