DAP222M Просмотр технического описания (PDF) - Willas Electronic Corp.

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DAP222M

SOT-723 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

SOT-723 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

DAP222MTHRU

FM1200-M+

Pb Free Product

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

SWITCHIoNptGimDizeIObDoaErd space.

• Low power loss, high efficiency.

FEATUR• HEiSgh current capability, low forward voltage drop.

SOT-723 0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

z Ultra••SGHmiugaahrldsl ruSirnuggerffocaarcpoeavebMrilviotoyul.tnagtiengproTtyepcteion.

z Ultra•HUigltrha Shipghe-esdpeSedwsitwcihtcinhigngA. pplications

z High •RSeilliicaobnileitpyitaxial planar chip, metal silicon junction.

z Pb-F•reLMeeIaLpd-S-afTrceDke-a1p9ga5ret0s0ims/2ea2e8vt eanilvairbolnemental standards of

0.071(1.8)

0.056(1.4)

RoHS• RporHoSdpurocdtufcotrfopr apacckkiinnggccoodedseufsfixuf"fGix" ”G”

Halogen free product for packing code suffix "H"

z

HalogMeencfrheeanpriocdaulcdt faortapacking code suffix “H”

Mois•tEuproexyS:eUnLs9i4t-iVv0itryatLedefvlaeml

1

e retardant

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

y Method 2026

r MARKIN• GPo:laPrity : Indicated by cathode band

MAXIMU•MMoRuAntTinIgNPGoSsiti(oTn a:=A2ny5℃ unless otherwise noted )

a Sym•bWoleight : Approximated 0.011 graPmarameter

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

Value

Unit

in VRRM MAXPeIMakURMevReArsTeINVoGltSagAeND ELECTRICAL CHARACTERISTIC8S0

V

RatiVngRsWMat 25℃ ambWieonrtktienmgpPereaatukreRuenvleerssseoVthoelrtwaigsee specified.

Single phase half wave, 60Hz, resistive of inductive load.

ForVcRa(RpMaSc)itive load, dReMraSteRceurvreenrst ebyV2o0lt%age

80

V

56

V

lim IO

CRoAnTtinINuGoSus Forward CurrentSYMBOL FM120-MH FM130-MH FM140-MH FM115000-MH FM160-MH FM180-MmH AFM1100-MH FM1150-MH FM1200-MH UN

Marking Code

MaximIuFmM Recurrent PPeaekaRkeFveorrsweaVrodltaCguerrent

12

13

VRRM

20

30

14

15

16

40

53000 60

18

80

mA

10

100

115 120

150

200 Vo

e MaximIFuSmMRMS VoltagNe on-Repetitive Peak ForwardVRSMuSrge Cu1r4rent (t=211µs) 28

Maximum DC Blocking Voltage

r PD

Power Dissipation

Maximum Average Forward Rectified Current

VDC

20

30

40

IO

354

42

50

60

150

1.0

56 A 70

80

100

mW

105

140 Vo

150

200 Vo

Am

P Peak

RFoθrJwAard

Surge

Thermal Resistance from Junction

Current 8.3 ms single half sine-wave IFSM

to

Ambient

833

℃/W

30

Am

superimTpjosed on rated lJouadn(cJtEioDnECTemmetphoedr)ature

150

℃

Typical Thermal

TypicaTl sJtug nction

ResistSatnocrea(gNeotTee2m) perature

Capacitance (Note 1)

RΘJA

CJ

40

-55~+150 120

℃

℃/

P

ELOEpCeraTtiRngICTeAmLpeCratHurAe RRaAngCe TERISTICS(Ta=25℃TJunless oth-5e5rwto i+s1e25specified)

Storage Temperature Range

TSTG

-55 to +150

- 65 to +175

℃

℃

Parameter

Symbol

Test conditions

Min Typ Max

Unit

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

RevMearxsiemuvmolFtaorgweard Volt= age at 1.0A DC V(BR) IVRF 100uA

0.50

0.70 80

0.85

0V.9

0.92 Vo

RevMearsxiemucmurArveenratge R= everse Current at @IRT A=25℃ VIRR 70V

Rated DC Blocking Voltage

@T A=125℃

0.5

0.1

µA

mA

10

Forward voltage = VF IF 100mA

NOTES:

1.2

V

Tot1a-lMceaapsaurceidtatn1cMeHZ and app= lied rev= erse vColttoatge of 4.0 VDCV. R 6V,f 1MHz

3.5

pF

2- Thermal Resistance From Junction to Ambient

Reverse recovery time

trr

IF=5mA, VR=6V,RL=50Ω

4

ns

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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