DAP222WM(2011) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

DAP222WM
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

Switching Diode

DAP222WM

lApplications

High frequency switching

lDimensions (Unit : mm)

lFeatures

1)Ultra small mold type. (EMD3F)

2)High reliability

lConstruction

Silicon epitaxial planer

ROHM : EMD3F

dot (year week factory)

lTaping dimensions (Unit : mm)

Data Sheet

　　lLand size figure (Unit : mm)

1.0

0.5 0.5

0.7

0.6

0.6

EMD3

lStructure

lAbsolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive)

VRM

80

V

Reverse voltage (DC)

VR

80

V

Forward voltage(repetitive peak)

IFM

300

mA

Average rectified forward current

Io

100

mA

Surge current(t=1s)

Isurge

4

A

Power dissipation

Pd

150

mW

Junction temperature

Tj

150

C

Storage temperature

Tstg

-55 to +150

C

lElectrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

Max.

Forward voltage

VF

-

Reverse current

IR

-

Capacitance between terminals

Ct

-

-

1.2

-

0.1

-

3.5

Reverse recovery time

trr

-

-

4

Unit

Conditions

V

IF=100mA

μA

VR=70V

pF

VR=6V , f=1MHz

ns

VR=6V , IF=5mA , RL=50Ω

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© 2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.12 - Rev.A

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