D2011 Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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D2011

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

D2011UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Drain–Source

BVDSS Breakdown Voltage

VGS = 0

ID = 10mA

65

IDSS

Zero Gate Voltage

Drain Current

VDS = 28V

VGS = 0

IGSS Gate Leakage Current

VGS(th) Gate Threshold Voltage*

gfs

Forward Transconductance*

GPS Common Source Power Gain

h

Drain Efficiency

VSWR Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

PO = 10W

VDS = 28V

f = 1GHz

VDS = 0

VDS = VGS

ID = 1.6A

IDQ = 0.8A

1

1.44

10

40

20:1

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 0

VDS = 28V

VDS = 28V

VGS = –5V f = 1MHz

VGS = 0 f = 1MHz

VGS = 0 f = 1MHz

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%

Typ.

Max. Unit

V

8

mA

8

mA

7

V

S

dB

%

—

96

pF

48

pF

4

pF

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Max. 2.5°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 9/00

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