TDA2050 Просмотр технического описания (PDF) - STMicroelectronics
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TDA2050 Datasheet PDF : 13 Pages
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TDA2050
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit, VS = ±18V, Tamb = 25°C, f = 1 kHz; un-
less otherwise specified)
Symbol
VS
Id
Parameter
Supply Voltage Range
Quiescent Drain Current
Ib
Input Bias Current
VOS Input Offset Voltage
IOS Input Offset Current
PO
RMS Output Power
Music Power
IEC268.3 RULES
d
Total Harmonic Distortion
SR
GV
GV
BW
eN
Ri
SVR
η
Slew Rate
Open Loop Voltage Gain
Closed Loop Voltage Gain
Power Bandwidth (-3dB)
Total Input Noise
Input Resistance (pin 1)
Supply Voltage Rejection
Efficiency
Tsd-j Thermal Shut-down
Junction Temperature
Test Condition
VS = ±4.5V
VS = ±25V
VS = ±22V
VS = ±22V
VS = ±22V
d = 0.5%
RL = 4Ω
RL = 8Ω
VS = ±22V RL = 8Ω
d = 10%
RL = 4Ω
RL = 8Ω
VS = ±22V RL = 8Ω
d = 10%; T = 1s
VS = ±22.5V; RL = 4Ω
RL = 4Ω
f = 1kHz, PO = 0.1 to 24W
f = 100Hz to 10kHz, PO = 0.1 to 18W
VS = ±22V RL = 8Ω
f = 1kHz, PO = 0.1 to 20W
f = 100Hz to 10kHz, PO = 0.1 to 15W
RL = 4Ω Vi = 200mV
curve A
B = 22Hz to 22kHz
Rs = 22kΩ; f = 100Hz;
Vripple = 0.5Vrms
PO = 28W; RL = 4Ω
PO = 25W; RL = 8Ω;
VS = ±22V
Min.
±4.5
Typ.
30
55
0.1
Max.
±25
50
90
0.5
±15
±200
24
28
18
22
25
35
22
32
50
0.03 0.5
0.5
0.02
0.5
5
8
80
30 30.5 31
20 to 80,000
4
5
10
500
45
65
67
150
Unit
V
mA
mA
µA
mV
nA
W
W
W
W
W
W
W
%
%
%
%
V/µs
dB
dB
Hz
µV
µV
kΩ
dB
%
%
°C
3/13
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