RFT1P06E Просмотр технического описания (PDF) - Intersil

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производитель

RFT1P06E

1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

Intersil 

RFT1P06E

Typical Performance Curves (Continued)

-10

If R = 0

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

-1

0.01

0.1

1

10

100

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-20

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TA = 25oC

-15

-10

VGS = -20V

VGS = -10V

VGS = -7V

VGS = -6V

-5

VGS = -5V

0

0

-1.5

-3.0

-4.5

-6

-7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

-20

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = -15V

-15

-55oC

25oC

2.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = -10V, ID = -1.4A

2.0

-10

150oC

-5

0

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. TRANSFER CHARACTERISTICS

1.5

1.0

0.5

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = -250µA

1.0

0.8

0.6

0.4

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4-174

1.2

ID = -250µA

1.1

1.0

0.9

0.8

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

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