R1P06E Просмотр технического описания (PDF) - Intersil
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R1P06E Datasheet PDF : 8 Pages
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RFT1P06E
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
RFT1P06E
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
-60
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
-60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20V
V
Drain Current
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
1.4
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 5
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25oC
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PD
..
1.1
9.09
W
mW/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS ID = 250µA, VGS = 0V (Figure 11)
-60
-
-
V
VGS(TH) VGS = VDS, ID = 250µA (Figure 10)
-2
-
-4
V
IDSS
VDS = -60V, VGS = 0V
VDS = -60V, VGS = 0V, TA = 150oC
-
-
-1
µA
-
-
-50
µA
IGSS
VGS = ±10V
-
-
±100 nA
rDS(ON) ID = 1.4A, VGS = -10V (Figure 9)
-
0.215 0.285 W
tON
td(ON)
tr
VDD = -30V, ID ≅ 1.4A,
RL = 21.4Ω, VGS = -10V,
RGS = 18Ω
-
-
51
ns
-
9
-
ns
-
25
-
ns
td(OFF)
-
35
-
ns
tf
-
28
-
ns
tOFF
-
-
95
ns
Qg(TOT) VGS = 0V to -20V VDD = -30V, ID ≅ 1.4A,
-
Qg(-10)
VGS = 0V to -10V
RL = 21.4Ω
IG(REF) = 1.0mA
-
Qg(TH) VGS = 0V to -2V (Figure 13)
-
31
37
nC
17
20
nC
1.1
1.3
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJA
VDS =-25V, VGS = 0V,
f = 1MHz
(Figure 12)
Pad Area = 0.122in2 (Note 2)
Pad Area = 0.071in2 (Note 2)
Pad Area = 0.026in2 (Note 2)
-
600
-
pF
-
175
-
pF
-
40
-
pF
-
-
110 oC/W
-
-
119 oC/W
-
-
137 oC/W
NOTE:
2. 110oC/W measured using FR-4 board with 0.122in2 footprint at 1000 seconds (See Technical Brief 337).
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = -1.4A
ISD = -1.4A, dISD/dt = -100A/µs
ISD = -1.4A, dISD/dt = -100A/µs
MIN
TYP
MAX UNITS
-
-
-1.25
V
-
-
71
ns
-
-
192
nC
4-172
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