CY62256VL-70ZC(1996) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY62256VL-70ZC Datasheet PDF : 10 Pages
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PRELIMINARY
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions[4]
VDR
ICCDR
tCDR[3]
tR[3]
VCC for Data Retention
Data Retention Current
L
LL
Chip Deselect to Data
Retention Time
Operation Recovery Time
VCC = VDR = 3.0V,
CE > VCC - 0.3V,
VIN > VCC - 0.3V or
VIN < 0.3V
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
tCDR
CE
CY62256V
Min.
Max.
Unit
2.0
V
200
µA
20
µA
5
µA
0
ns
tRC
ns
3.0V
tR
C62256V–7
Switching Characteristics Over the Operating Range[5]
CY62256V-55
CY62256V-70
Parameter
Description
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
55
70
ns
tAA
Address to Data Valid
55
70
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
55
70
ns
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
OE LOW to Data Valid
OE LOW to Low Z[6]
OE HIGH to High Z[6, 7]
CE LOW to Low Z[6]
CE HIGH to High Z[6, 7]
25
35
ns
3
3
ns
20
25
ns
3
3
ns
20
25
ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
55
70
ns
Shaded area contains advanced information.
Notes:
4. No input may exceed VCC+0.3V.
5. Test conditions assume signal transition time of 5 ns or less timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 100-pF load capacitance.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
4
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