7C199-35VC Просмотр технического описания (PDF) - Cypress Semiconductor
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7C199-35VC Datasheet PDF : 13 Pages
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CY7C199
Electrical Characteristics Over the Operating Range (-20, -25, -35, -45) (continued)[3]
Parameter
Description
ISB1
Automatic CE
Power-down Current—
TTL Inputs
ISB2
Automatic CE
Power-down Current—
CMOS Inputs
7C199-20 7C199-25 7C199-35
Test Conditions
Min. Max. Min. Max. Min. Max.
Max. VCC, CE > VIH, Com’l
VIN > VIH or VIN < VIL, L
f = fMAX
Max. VCC,
Com’l
CE > VCC – 0.3V L
VIN > VCC – 0.3V or
VIN < 0.3V, f=0
Mil
30
5
10
0.05
15
30
5
10
0.05
15
25
5
10
0.05
15
7C199-45
Min. Max. Unit
25 mA
5 mA
10 mA
0.05 µA
15 mA
Capacitance[4 ]
CIN
COUT
Parameter
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
8
pF
8
pF
AC Test Loads and Waveforms[5]
5V
OUTPUT
R1 481Ω
5V
OUTPUT
R1 481Ω
30 pF
INCLUDING
JIG AND
SCOPE
R2
255 Ω
(a)
5 pF
R2
255Ω
INCLUDING
JIG AND
SCOPE (b)
Equivalent to:
THÉVENIN EQUIVALENT
OUTPUT
167 Ω
1.73V
3.0V
GND
10%
≤tr
ALL INPUT PULSES
90%
90%
10%
≤tr
Data Retention Characteristics Over the Operating Range (L-version only)
Parameter
Description
Conditions[6]
Min.
Max.
Unit
VDR
ICCDR
tCDR[4]
tR [5]
VCC for Data Retention
2.0
V
Data Retention Current
Com’l
Com’l L
VCC = VDR = 2.0V, CE > VCC –
0.3V, VIN > VCC – 0.3V or VIN <
0.3V
µA
10
µA
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
200
µs
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
tCDR
CE
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
5. tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds
6. No input may exceed VCC + 0.5V.
3.0V
tR
Document #: 38-05160 Rev. *A
Page 3 of 13
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