CY7C199D(2007) Просмотр технического описания (PDF) - Cypress Semiconductor

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производитель

CY7C199D
(Rev.:2007)

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY7C199D

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

Conditions

VDR

ICCDR

tCDR [3]

tR [12]

VCC for Data Retention

Data Retention Current

VCC = VDR = 2.0V, CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

Chip Deselect to Data Retention Time

Operation Recovery Time

Data Retention Waveform

DATA RETENTION MODE

VCC

4.5V

VDR > 2V

4.5V

tCDR

tR

CE

Min Max Unit

2.0

V

3

mA

0

ns

tRC

ns

Switching Waveforms

Read Cycle No. 1 (Address Transition Controlled) [13, 14]

tRC

ADDRESS

DATA OUT

tAA

tOHA

PREVIOUS DATA VALID

DATA VALID

Read Cycle No. 2 (OE Controlled) [14, 15]

tRC

CE

tACE

OE

DATA OUT

VCC

SUPPLY

CURRENT

tDOE

tLZOE

HIGH IMPEDANCE

tLZCE

tPU

50%

DATA VALID

tHZOE

tHZCE

HIGH

IMPEDANCE

tPD

ICC

50%

ISB

Notes:

12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.

13. Device is continuously selected. OE, CE = VIL.

14. WE is HIGH for read cycle.

15. Address valid prior to or coincident with CE transition LOW.

Document #: 38-05471 Rev. *D

Page 6 of 10

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