CY7C1021D(2009) Просмотр технического описания (PDF) - Cypress Semiconductor

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производитель

CY7C1021D
(Rev.:2009)

1-Mbit (64K x 16) Static RAM

Cypress Semiconductor 

CY7C1021D

Capacitance [4]

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Test Conditions

TA = 25 °C, f = 1 MHz, VCC = 5.0V

Thermal Resistance [4]

Parameter

ΘJA

ΘJC

Description

Thermal Resistance

(Junction to Ambient)

Thermal Resistance

(Junction to Case)

Test Conditions

Still Air, soldered on a 3 × 4.5 inch,

four-layer printed circuit board

Figure 2. AC Test Loads and Waveforms [5]

Max

Unit

8

pF

8

pF

SOJ

59.52

36.75

TSOP II

53.91

21.24

Unit

°C/W

°C/W

OUTPUT

Z = 50Ω

* CAPACITIVE LOAD CONSISTS

OF ALL COMPONENTS OF THE

TEST ENVIRONMENT

50 Ω

1.5V

(a)

30 pF*

3.0V

GND

ALL INPUT PULSES

90%

90%

10%

10%

Rise Time: ≤ 3 ns

(b)

Fall Time: ≤ 3 ns

High-Z characteristics:

R1 480Ω

5V

OUTPUT

INCLUDING

JIG AND

SCOPE

5 pF

(c)

R2

255Ω

Notes

4. Tested initially and after any design or process changes that may affect these parameters.

5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure 2 (a). High-Z characteristics are tested for all speeds using the test load

shown in Figure 2 (c).

Document #: 38-05462 Rev. *F

Page 4 of 11

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