CY14B101LA-SZ25XIT(2011) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY14B101LA-SZ25XIT Datasheet PDF : 26 Pages
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CY14B101LA
CY14B101NA
Data Retention and Endurance
Parameter
DATAR
NVC
Description
Data retention
Nonvolatile STORE operations
Capacitance
Parameter[15]
CIN
COUT
Description
Input capacitance (except BHE, BLE and HSB)
Input capacitance (for BHE, BLE and HSB)
Output capacitance (except HSB)
Output capacitance (for HSB)
Test Conditions
TA = 25 °C, f = 1 MHz,
VCC = VCC (Typ)
Min
20
1,000
Unit
Years
K
Max
Unit
7
pF
8
pF
7
pF
8
pF
Thermal Resistance
Parameter[15]
Description
Test Conditions
ΘJA
Thermal resistance Test conditions follow
(Junction to ambient) standard test methods and
ΘJC
Thermal resistance
(Junction to case)
procedures for measuring
thermal impedance, in
accordance with
EIA/JESD51.
54-TSOP II 48-SSOP 48-FBGA 44-TSOP II 32-SOIC Unit
36.4
37.47 38.58
41.74
41.55 °C/W
10.13
24.71 11.71
11.90 24.43 °C/W
Figure 5. AC Test Loads
3.0 V
OUTPUT
30 pF
577 Ω
R1
R2
789 Ω
3.0 V
OUTPUT
5 pF
577 Ω
R1
for tristate specs
R2
789 Ω
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5 V
Note
15. These parameters are guaranteed by design and are not tested.
Document #: 001-42879 Rev. *K
Page 10 of 26
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