CXK77V3211Q Просмотр технического описания (PDF) - Sony Semiconductor

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производитель

CXK77V3211Q

32768-word by 32-bit High Speed Synchronous Static RAM

Sony Semiconductor 

CXK77V3211Q

DC and Operating Characteristics

Item

Symbol

Input leakage current ILI

Output leakage

current

ILO

Operating supply

current

Static CMOS supply

current

IDD-0MHz

IDD-66MHz

IDD-80MHz

IDD1-0MHz

Standby current

ISB1

Deselect supply

current

Output High voltage

Output Low voltage

ISB2-0MHz

ISB2-66MHz

ISB2-80MHz

VOH

VOL

(VDD

=

3.3V

+10%

– 5%

,

GND

=

0V,

Ta

=

0

to

+70°C)

Test condition

Min. Max. Unit

VIN = GND to VDD

–1

1

µA

Output disabled,

VOUT = GND to VDD

–1

1

µA

Device selected; all inputs ≤ VIL or ≥ VIH;

cycle time ≥ tKC min, VDD = MAX;

outputs open

20

—

210 mA

250

All inputs ≤ 0.2V or ≥ VDD – 0.2V

—

20 mA

ZZ ≥ VDD –0.2V,

All inputs ≤ 0.2V or ≥ VDD – 0.2V

Device deselect

IOH = –5.0mA

IOL = 5.0mA

—

20 mA

20

—

120 mA

140

2.4

—

V

—

0.4

V

DC and Operating Characteristics for Special Modes-pins

Mode-pins

VIN

ILI

FT

≥ VIH + 0.5V

< 1µA

ZZ

< VIH + 0.5V

> 10KΩ to VSS

LBO

≥ VIL

< VIL

< 1µA

> 10KΩ to VDD

These Mode-pin input buffers (FT, ZZ, LBO) have special self-bias circuit to protect against coupling noise

when these pins are not connected during normal operations.

–7–

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