CXK77V3211Q Просмотр технического описания (PDF) - Sony Semiconductor
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Компоненты Описание
производитель
CXK77V3211Q Datasheet PDF : 18 Pages
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CXK77V3211Q
Function
Linear burst
Interleaved burst
LBO
L
H or NC
Function
Flow-thru output
Pipelined output
FT
L or NC
H
Function
Powerdown to ISB1
Active
Partial Truth Table
Function
READ
READ
WRITE byte 1
WRITE all bytes
WRITE all bytes
ZZ
H
L or NC
SGW
H
H
H
H
L
BWE
H
L
L
L
X
BW1
X
H
L
L
X
BW2
X
H
H
L
X
BW3
X
H
H
L
X
BW4
X
H
H
L
X
Absolute Maximum Rating
Item
Supply voltage
Input voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature · time
Symbol
VDD
VIN
PD
Topr
Tstg
Tsolder
(Ta = 25°C, GND = 0V)
Rating
Unit
–0.5 to +4.6
V
–0.5 to 6 (Max.)
V
1.6
W
0 to +70
°C
–55 to +150
°C
235 · 10
°C · sec
DC Recommended Operating Conditions
Item
Supply voltage
Input high voltage
Input low voltage
Symbol
VDD
VIH
VIL
Min.
3.135
2.0
–0.3
Typ.
3.3
—
—
Note) 1. All voltage referenced to VSS (GND).
2. Overshoot: VIH ≤ VDD + 2.0V for t ≤ tKC/2.
Undershoot: VIL ≥ –2.0V for t ≤ tKC/2.
–6–
(Ta = 0 to +70°C, GND = 0V)
Max.
Unit
Note
3.63
V
1
5.5
V
1, 2
0.8
V
1, 2
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