CXK5V16100TM Просмотр технического описания (PDF) - Sony Semiconductor

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производитель

CXK5V16100TM

65536-word X 16-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5V16100TM

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Symbol Min.

Typ.

Max. Unit

Supply voltage

VCC

3.0

3.3

3.6

V

Input high voltage

Input low voltage

VIH

2.0

—

VIL

–0.3∗

—

∗ VIL = –3.0V Min. for pulse width less than 50ns.

VCC + 0.3 V

0.8

V

Electrical Characteristics

DC and operating characteristics

Item

Symbol

(VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)

Test condition

Min. Typ.∗ Max. Unit

Input leakage

current

ILI

VIN = GND to VCC

–1

—

1 µA

Output leakage

current

ILO

CE = VIH or UB = VIH or LB = VIH or

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

1 µA

Operating

power supply

ICC1

current

ICC2

Average

operating current

ICC3

CE = VIL

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

Duty = 100%

IOUT = 0mA

Cycle time 1µs

Duty = 100%

IOUT = 0mA

CE ≤ 0.2V

VIL ≤ 0.2V

VIH ≥ VCC – 0.2V

85LLX

10LLX

—

1

3 mA

—

40

55

mA

—

35

50

—

10

20 mA

–25 to +85°C —

—

40

ISB1

Standby current

CE ≥ VCC – 0.2V

–25 to +70°C —

—

20

µA

–25 to +40°C —

—

4

Output

high voltage

ISB2

CE = VIH

VOH

IOH = –2.0mA

+25°C

—

0.5

2

— 0.03 0.6 mA

2.4

—

—

V

Output

low voltage

VOL

IOL = 2.0mA

—

—

0.4 V

∗ VCC = 3.3V, Ta = 25°C

–3–

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